| PART |
Description |
Maker |
| CY7C1231H-133AXI CY7C1231H-133AXC |
2-Mbit (128K x 18) Flow-Through SRAM with NoBLArchitecture
2-Mbit (128K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
|
| CY7C1324H-133AXC CY7C1324H-133AXI |
2-Mbit (128K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
| CY7C1231F-100 CY7C1231F CY7C1231F-117 CY7C1231F-10 |
2-Mb (128K x 18) Flow-through SRAM with NoBL(TM) Architecture
2-Mbit (128K x 18) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| IS61LF12832A IS61LF12832A-6.5B2 IS61LF12832A-6.5B3 |
128K X 32, 128K X 36, 256K X 18 4 MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| SST29VE010-200-4I-NHE SST29EE010-70-4I-EHE |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| CY62137CV30LL-55BVXI CY62137CV30LL-70BAE CY62137CV |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
|
| IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect
3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
| A67L73321 A67L73321E-10 A67L73321E-11 A67L73321E-1 |
256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM 256 × 16/1828K的X 32/36 LVTTL，流通过数据库管理员的SRAM
256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
